|
|
|
ACMOSradiofrequencylownoiseamplifierwithhighlinearityandlowoperationvoltageoflessthan
1.0Vispresented.Inthiscircuit,anauxiliaryMOSFETinthetrioderegionisusedtoboostthelinearity.Simula
tionshowsthatthismethodcanboosttheinput-referred3rd orderinterceptpointwithmuchlesspowerdissipation
thanthatoftraditionalpowerlinearitytradeoffsolutionwhichpaysatleast1dBpowerfor1dBlinearityimprove
ment.ItisalsoshownthatthesizeofthecommongatePMOStransistorneedstobeoptimizedtoreduceitsloaded
inputimpedancesoasnottodegradethelinearityduetohighvoltagegainatitssourceterminal.Thesimulationis
carriedoutwithTSMC0.18LmRFCMOStechnologyandSpectreRF.
|
|
提升卡
变色卡
千斤顶
1/7 
京公网安备 11010802033920号
Copyright © 2005-2025 EEWORLD.com.cn, Inc. All rights reserved
