场效应管1N60.FL1N60

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场效应管1N60.FL1N60 [复制链接]

600V N-Channel Power MOSFET:FL1N60,台湾方晶科技品牌,FL1N60规格书资料,主要用于充电器、备用电源等.

 

特点：
 ·Die in 6" Wafer Form   
 ·600V,1A*,N-Channel         
 ·RDS(ON)=9.5Ω(MAX.)***
 ·100% Tested at Probe

 

应用:

 Cell Photo Charger                   
 Standby Power