【STM32F723 Discovery Kit】外扩SRAM存储器读写测试

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【STM32F723 Discovery Kit】外扩SRAM存储器读写测试 [复制链接]

这篇来测试下开发板外扩SRAM存储器的读写。

 

一、外扩SRAM硬件电路

 

1.1、外扩SRAM电路图部分

 

1.2、SRAM存储器的地址范围

 

SRAM 接在STM32的FMC总线接口，看下手册中FMC外扩存储器的框图

SRAM存储器使用了FMC_NE1接口，对应的存储器地址如下

存储地址范围：0X6000 0000 ~ 0x6FFF FFFF

 

 

1.3、存储器容量

 

看下开发板使用的这款芯片的存储空间大小

从芯片手册上看，存储空间是8Mbit，512K*16位的存储空间。

 

 

二、测试程序

 

测试程序对sram芯片1MB范围内数据的读写测试，存储地址存取每次增加4000。

 

2.1、sram.c

#include "sram/sram.h"
#include "usart/usart.h"

#define BUFFER_SIZE         ((uint32_t)0x8000)
#define WRITE_READ_ADDR     ((uint32_t)0x0800)
#define WRITING_OFFSET      ((uint32_t)0xC20F)

SRAM_HandleTypeDef psramHandle;
FMC_NORSRAM_TimingTypeDef Timing;

uint8_t aTxBuffer[BUFFER_SIZE];
uint8_t aRxBuffer[BUFFER_SIZE];

__IO uint32_t uwWriteReadStatus = 0;

uint32_t uwIndex = 0;

//uint32_t sram_test_buffer[200000] __attribute__((at(SRAM_BANK_ADDR)));

static void Error_Handler(void)
{
  printf("error\r\n");
  while (1)
  {
  }
}


void sram_Init(void)
{
  /* SRAM device configuration */
  psramHandle.Instance = FMC_NORSRAM_DEVICE;
  psramHandle.Extended = FMC_NORSRAM_EXTENDED_DEVICE;
  
  /* Timing configuration derived from system clock (up to 200Mhz)
     for 100Mhz as SRAM clock frequency */
  Timing.AddressSetupTime      = 9;
  Timing.AddressHoldTime       = 2;
  Timing.DataSetupTime         = 6;
  Timing.BusTurnAroundDuration = 1;
  Timing.CLKDivision           = 2;
  Timing.DataLatency           = 2;
  Timing.AccessMode            = FMC_ACCESS_MODE_A;
  
  psramHandle.Init.NSBank             = FMC_NORSRAM_BANK1;
  psramHandle.Init.DataAddressMux     = FMC_DATA_ADDRESS_MUX_DISABLE;
  psramHandle.Init.MemoryType         = FMC_MEMORY_TYPE_SRAM;
  psramHandle.Init.MemoryDataWidth    = SRAM_MEMORY_WIDTH;
  psramHandle.Init.BurstAccessMode    = FMC_BURST_ACCESS_MODE_DISABLE;
  psramHandle.Init.WaitSignalPolarity = FMC_WAIT_SIGNAL_POLARITY_LOW;
  psramHandle.Init.WaitSignalActive   = FMC_WAIT_TIMING_BEFORE_WS;
  psramHandle.Init.WriteOperation     = FMC_WRITE_OPERATION_ENABLE;
  psramHandle.Init.WaitSignal         = FMC_WAIT_SIGNAL_DISABLE;
  psramHandle.Init.ExtendedMode       = FMC_EXTENDED_MODE_DISABLE;
  psramHandle.Init.AsynchronousWait   = FMC_ASYNCHRONOUS_WAIT_DISABLE;
  psramHandle.Init.WriteBurst         = FMC_WRITE_BURST_DISABLE;
  psramHandle.Init.ContinuousClock    = FMC_CONTINUOUS_CLOCK_SYNC_ONLY;

  /* Initialize the SRAM controller */
  if(HAL_SRAM_Init(&psramHandle, &Timing, &Timing) != HAL_OK)
  {
    /* Initialization Error */
    Error_Handler();
  }
}

void sram_test(void)
{
	uint32_t i = 0;
	uint8_t temp = 0;
	
	printf("ext memoory test\r\n");

	printf("\r\nwrite data:\r\n");
	temp=0;
	for (i = 0; i < 1024000; i += 4000)
	{
		aTxBuffer[0]=temp;
		temp++;
		
		HAL_SRAM_Write_8b(&psramHandle, (uint32_t *)(SRAM_BANK_ADDR + i), aTxBuffer, 1);
		printf(" %x",aTxBuffer[0]);
	}
	
	printf("\r\nread data:\r\n");
	temp=0;
	for (i = 0; i < 1024000; i += 4000)
	{
			HAL_SRAM_Read_8b(&psramHandle, (uint32_t *)(SRAM_BANK_ADDR + i), aRxBuffer, 1);
		
			printf(" %x",aRxBuffer[0]);
			aRxBuffer[0]=0;
	}
}

 

2.2、sram.h

#ifndef _SRAM_H
#define _SRAM_H


#include "stm32f7xx_hal.h"

#define SRAM_BANK_ADDR                 ((uint32_t)0x60000000)

/* #define SRAM_MEMORY_WIDTH            FMC_NORSRAM_MEM_BUS_WIDTH_8  */
#define SRAM_MEMORY_WIDTH               FMC_NORSRAM_MEM_BUS_WIDTH_16


#define SRAM_TIMEOUT     ((uint32_t)0xFFFF)


void sram_Init(void);
void sram_test(void);


#endif

 

2.3、main.c

int main(void)
{
  MPU_Config();					/* Configure the MPU attributes */
  CPU_CACHE_Enable();		/* Enable the CPU Cache */
  HAL_Init();
  SystemClock_Config();	/* Configure the system clock to 216 MHz */
  delay_init(216);
  led_init();
  usart_init(115200); 
  sram_Init();
  sram_test();
	
  LED5(0);                                           
  LED6(1);
	
  while (1)
  {
	LED5_TOGGLE();
	LED6_TOGGLE();
    HAL_Delay(100);

  }
}

 

三、程序运行

 

串口输出：

 

 

火辣西米秀

程序运行的串口输出应该是正确的

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火辣西米秀 发表于 2023-9-24 08:30 程序运行的串口输出应该是正确的

嗯，测试输出正常

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