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Abstract:ACMOSradiofrequencylownoiseamplifierwithhighlinearityandlowoperationvoltageoflessthan
1.0Vispresented.Inthiscircuit,anauxiliaryMOSFETinthetrioderegionisusedtoboostthelinearity.Simula-
tionshowsthatthismethodcanboosttheinput-referred3rd-orderinterceptpointwithmuchlesspowerdissipation
thanthatoftraditionalpowerlinearitytradeoffsolutionwhichpaysatleast1dBpowerfor1dBlinearityimprove-
ment.Itisalsoshownthatthesizeofthecommon-gatePMOStransistorneedstobeoptimizedtoreduceitsloaded
inputimpedancesoasnottodegradethelinearityduetohighvoltagegainatitssourceterminal.Thesimulationis
carriedoutwithTSMC0.18LmRFCMOStechnologyandSpectreRF.
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