课程内容:
本课程属于高级射频集成电路设计培训课程,适合具有一定基础的学员:偏重设计中的实际问题,RFIC权威教授:Prof. Thomas H. Lee和Prof. C. Patrick Yue在上海、Prof. Asad A. Abidi在合肥为我们带来以下课程内容:
CMOS RF IC Design
(Prof. Thomas H. Lee, August 26, 2014,Shanghai)
1、Impedance transformation
▲When to do it; When not to do it; how to do it
▲Bode-Fano limits on matching bandwidth
▲Unintended transformation by active circuits: "Strange impedance behaviors (SIBs); simple models and examples
▲Conscious exploitation of SIBs
2、Noise in linear, time-invariant (LTI) systems
▲LNA design: Noise match vs. power match
▲How to use SIBs to achieve good noise and power match simultaneously
▲Noise "cancellation"
3、Noise in linear, time-varying (LTV) systems
▲Phase noise in oscillators: Theory and practice
▲Noise in mixers
4、Nonlinearity
▲Figures of merit: 1-dB compression point; intermodulation intercepts (IP2, IP3); adjacent-channel power ratio (ACPR); spurious-free dynamic range (SFDR)
▲Nonlinearity reduction techniques: Feedback; strong and weak feedforward
5、Techniques for circuit design at extremes of frequency
▲Amplifier bandwidth extension techniques: Shunt peaking; bridged T-coil; distributed architectures; Ft-doubler
▲Oscillator and synthesizer frequency extension techniques: Multiphase push-push-push; frequency multiplication with nonlinear elements; injection locking (if time permits)
▲Power combining structures and strategies: Corporate combiners; free-space combining
▲Interconnect: Microstrip, stripline, coplanar waveguide
Practical RFIC Implementation Techniques in Scaled CMOS Technologies
(Prof. C. Patrick Yue, August 27, 2014,Shanghai)
1、CMOS for RFIC Products
▲Trends in wireless communication and RFIC integration
▲RF technology options: to use or not to use?
▲Scalability of RF CMOS beyond 130nm: device characteristics and passive component quality at RF
2、RF Device and Passive Component Modeling
▲MOSFET macro modeling and layout optimization
▲Physical modeling and layout optimization for inductors
▲Transformer design trade-offs and circuit applications
▲Varactor modeling and optimization – diode vs. MOS
▲Test structure design and characterization techniques
3、 Technology Key Circuit Blocks
▲T/R switch – improve P-1dB and isolation with tuned circuits
▲LNA – topology, sizing and biasing for noise and power
▲Mixer – topology, linearity and noise considerations
▲VCO – phase noise, power and tuning range optimization
4、 Modeling, Substrate Noise and ESD Techniques
▲Methodology for predictable design using RF sub-circuits
▲Supply and substrate noise coupling
▲RF ESD protection strategy from a system perspective
Systematic Design of Oscillator Circuits
(Prof. Asad A. Abidi, August 30, 2014,Hefei)
In this one day tutorial/short course, Prof. Asad A. Abidi will present his unique highly valued training methods and contents of oscillator design based on fundamental analysis and calculation, not the common PDK-based and EDA-based “error-and-try” optimization. It will most benefit circuit designers in industry involved with oscillators and frequency synthesizers.
▲Noise processes in CMOS oscillators;
▲Time-domain jitter calculation;
▲Effects of white noise and flicker noise etc.;
▲What dominates the jitter and phase noise?
▲Where are they arise from?
▲Theocratic analysis and design of circuits with validation;
▲Straightforward expressions for period jitter and phase noise enable manual design;
▲Design guidance from ring and LC oscillator.