如何利用专门设计的测量室和分子束沉积(MBD)系统测量高电阻概述

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如何利用专门设计的测量室和分子束沉积(MBD)系统测量高电阻概述 [复制链接]

晶体[1]材料是现代电子和光电子技术的基础。因此，这些材料的电子特性，如(各向异性) 电导率和光电导率以及与这些特性有关的温度依存性，都是研究人员关注的问题。采用大量结晶技术的晶体生长尺寸可能不大，但往往表现出极高的电阻。这个应用笔记说明如何利用专门设计的测量室[2]和分子束沉积(MBD)系统（在晶体或薄膜生长过程中对其进行现场测量）来测量高达10¹⁷W的电阻。

 

Crystalline materials are fundamental to modern electronics andoptoelectronics. Therefore, the electrical properties of thesematerials, such as their  and photocon-ductivity, as well as the temperature dependencies associatedwith these properties, are of great interest to researchers. Thecrystals grown using a number of crystallization techniques maybe small in size and often exhibit very high resistances. Thisapplication note describes how to measure resistances as high as10¹⁷Ω in a specially designed measurement chamber, as well asin a Molecular Beam Deposition (MBD) system that allowsmaking in-situ measurements during crystal or film growth.

 

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[1] 晶体http://www.keithley.com.cn/llm/a/11.html

[2] 测量室http://www.keithley.com.cn/llm/a/searchresults?q=%E6%B5%8B%E9%87%8F%E5%AE%A4

[3] 6517A型静电计/高阻表http://www.keithley.com.cn/products/localizedproducts/highresistance/6517a