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如何解决F2812烧写后运行速度比仿真时慢的多的问题??
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我用GPIO程序仿真时,在IO输出口上得到6.26KHz的方波输出;一旦烧写进FLASH后运行,在IO输出口上得到1.17KHz的方波输出。二者相差5倍多。
仿真时用CMD文件摘录如下:
PAGE 0 :
PRAMH0 : origin = 0x3f8000, length = 0x001000
PAGE 1 :
RAMM0 : origin = 0x000000, length = 0x000400
RAMM1 : origin = 0x000400, length = 0x000400
DRAMH0 : origin = 0x3f9000, length = 0x001000
.reset : > PRAMH0, PAGE = 0
.text : > PRAMH0, PAGE = 0
.cinit : > PRAMH0, PAGE = 0
.stack : > RAMM1 , PAGE = 1
.bss : > DRAMH0, PAGE = 1
.ebss : > DRAMH0, PAGE = 1
.const : > DRAMH0, PAGE = 1
.econst : > DRAMH0, PAGE = 1
.sysmem : > DRAMH0, PAGE = 1
烧写时用CMD文件摘录如下:
PAGE 0 :
FLASHJ : origin = 0x3D8000, length = 0x002000
FLASHI : origin = 0x3DA000, length = 0x002000
FLASHB : origin = 0x3F4000, length = 0x002000
FLASHA : origin = 0x3F6000, length = 0x001FF6
BEGIN : origin = 0x3F7FF6, length = 0x000002
VECTORS : origin = 0x3FFFC2, length = 0x00003E
PAGE 1 :
RAMM0M1 : origin = 0x000000, length = 0x000800
RAML0L1 : origin = 0x008000, length = 0x002000
RAMH0 : origin = 0x3F8000, length = 0x002000
.reset : > BEGIN PAGE = 0
vectors : > VECTORS PAGE = 0
.cinit : > FLASHJ PAGE = 0
.text : > FLASHA PAGE = 0
.stack : > RAMM0M1 PAGE = 1
.bss : > RAML0L1 PAGE = 1
.ebss : > RAML0L1 PAGE = 1
.const : load =FLASHB PAGE 0, run = RAML0L1 PAGE 1
{__const_run = .;
*(.c_mark)
*(.const)
__const_length = .-__const_run;
}
.econst : load =FLASHB PAGE 0, run = RAML0L1 PAGE 1
{__econst_run = .;
*(.ec_mark)
*(.econst)
__econst_length = .-__econst_run;
}
.sysmem : > RAMH0 PAGE = 1
如何解决F2812烧写后运行速度比仿真时慢的多的问题??据说可以将代码下载到FLASH中,运行时再装载到SRAM中,但不知具体怎么操作?应该如何修改CMD文件?
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