此帖出自嵌入式系统论坛
最新回复
先不忙结帖,再等等高人.
我找到的几个参数:
KP transconductance 2E-5
W channel width .5
L channel length 2E-6
RS source ohmic resistance 10E-3
VTO zero-bias threshold voltage 3
RD ohmic drain resistance 10E-3
RDS drain-source shunt resistance (PSpice extension MOS model) 1E6
CGSO gate-source overlap capacitance 4E-11
CGDO gate-drain overlap capacitance 1E-11
CBD zero-bias bulk-drain junction capacitance 1E-9
PB bulk junction potential .8
MJ bulk junction grading coefficient .5
FC bulk junction forward-bias capacitance coefficient .5
RG gate ohmic resistance 5
IS bulk junction saturation current 1E-14
N bulk junction emission coefficient 1
RB bulk series resistance 1E-3
还有几个没有找到
LEVEL
TOX
MJ
PHI
GAMMA
DELTA
ETA
THETA
KAPPA
XJ
UO
详情
回复
发表于 2009-9-8 16:13
| ||
|
||
| |
|
|
| |
|
|
| |
|
|
| |
|
|
此帖出自嵌入式系统论坛
| ||
|
||
EEWorld Datasheet 技术支持