修改128M NAND boot 在WriteMBR 中出现error

dhiway

修改128M NAND boot 在WriteMBR 中出现error [复制链接]

typedef enum  _FLASH_TYPE { NAND, NOR } FLASH_TYPE;

typedef struct _FlashInfo
{
    FLASH_TYPE  flashType;
    DWORD       dwNumBlocks;
    DWORD       dwBytesPerBlock;
    WORD        wSectorsPerBlock;
    WORD        wDataBytesPerSector;

}FlashInfo, *PFlashInfo;


DWORD g_dwMBRSectorNum = INVALID_ADDR;
FlashInfo g_FlashInfo;


static BOOL WriteMBR()
{
    RETAILMSG(1, (TEXT("test\r\n")));
    DWORD dwMBRBlockNum = g_dwMBRSectorNum / g_FlashInfo.wSectorsPerBlock;

    RETAILMSG(1, (TEXT("WriteMBR: MBR block = 0x%x.\r\n"), dwMBRBlockNum));

    memset (g_pbBlock, 0xff, g_dwDataBytesPerBlock);
    memset (g_pSectorInfoBuf, 0xff, sizeof(SectorInfo) * g_FlashInfo.wSectorsPerBlock);
        
    // No need to check return, since a failed read means data hasn't been written yet.
    ReadBlock (dwMBRBlockNum, g_pbBlock, g_pSectorInfoBuf);

    if (!FMD_EraseBlock (dwMBRBlockNum)) {
        RETAILMSG (1, (TEXT("CreatePartition: error erasing block 0x%x\r\n"), dwMBRBlockNum));
        return FALSE;
    }

    memcpy (g_pbBlock + (g_dwMBRSectorNum % g_FlashInfo.wSectorsPerBlock) * g_FlashInfo.wDataBytesPerSector, g_pbMBRSector, g_FlashInfo.wDataBytesPerSector);
    g_pSectorInfoBuf->bOEMReserved &= ~OEM_BLOCK_READONLY;
    g_pSectorInfoBuf->wReserved2 &= ~SECTOR_WRITE_COMPLETED;
    g_pSectorInfoBuf->dwReserved1 = 0;

    if (!WriteBlock (dwMBRBlockNum, g_pbBlock, g_pSectorInfoBuf)) {
        RETAILMSG (1, (TEXT("CreatePartition: could not write to block 0x%x\r\n"), dwMBRBlockNum));
        return FALSE;
    }

    return TRUE;
   
}
EBOOT运行后，停在了那条除法指令上了（RETAILMSG(1, (TEXT("test\r\n")));能显示然后再也没有调试信息出来，）。g_FlashInfo.wSectorsPerBlock（全局变量）为0X100。我想应该是语法或者是编译等地方配置出错了，差不出，请指点。

zhangzhen

在 BOOL WriteMBR() 中事先赋值 g_FlashInfo.wSectorsPerBlock=0x100;
DWORD dwMBRBlockNum = g_dwMBRSectorNum / g_FlashInfo.wSectorsPerBlock;
就能通过了！

fhjfhj520

帮顶下。

MARK，学习下、